PHYSICS AND TECHNOLOGY OF MATERIALS

Academic Year 2024/2025 - Teacher: Antonio TERRASI

Expected Learning Outcomes

Basic knowledge of the main physico-chemical properties of materials in general and of some of specific application interest. In-depth knowledge of some issues of particular scientific and / or industrial interest. Basic knowledge of some techniques and technologies of growth and characterization of materials.

Course Structure

Lectures and seminars in classroom

5 CFU (7h/CFU), 1 CFU of lab. (15h/CFU)

Should circumstances require the lectures to be given online on in a mixed manner, some variations to the mechanisms illustrated above may become necessary, aiming however at fulfilling the planned
course programme.

Required Prerequisites

Knowledge of general physics related to the two-year courses, basic concepts on the structure of matter and quantum mechanics.

Attendance of Lessons

Usually mandatory

Detailed Course Content

Properties and characteristics of materials (metals, ceramics, polymers, semiconductors, and composites). Bonding in solids: metallic, ionic, covalent, Van der Waals and mixed.
Semiquantitative evaluation of the binding energy and relations with the compressibility. Structures crystal packing factor. Relations between microscopic structure and properties
mechanical. Surface energy of solids: description atomistic thermodynamics, mechanics.
Growth layers and islands of the deposited films. Energy of grain boundaries in a polycrystal, the equilibrium shape of the crystalline grains. Transmission electron microscope: principles of operation and applications. Thermodynamics and phase diagrams. Recalling the thermodynamic state functions. Curves of solidification, nucleation homogeneous and heterogeneous. Binary solutions ideal and real: the construction of phase diagrams, energy mixing, configurational entropy. Completely miscible systems. Phase transitions, homogeneous nucleation and heterogeneous grain growth, formation of precipitates, vapor pressure and growth Ostwald. Curves of solidification. Diffusion in solids. Microscopic description of atomic diffusion and distribution of the diffusion coefficient. Steady State: the diffusion equation for an ideal solution. Continuity equation and Fick's laws. Measurement of diffusion coefficient and significance of activation energy. Interstitial diffusionYoung's modulus, Poisson's ratio, and creep modulus of compressibility, relations deformation-tension. Point defects and line. Burger vector of the dislocations. Description of geometric properties of dislocations, deformation field and elastic energy of a dislocation helix and sharp, interactions between dislocations. Deposition of thin films by evaporation. Nucleation, growth and coarsening of grains for ripening. Mechanical properties of a film thin, interaction with the substrate, the field of deformation, thermal expansion and influence on the substrate. Interdiffusion in thin films and the formation of compounds. Metallization and interconnects in semiconductor devices. Preparation of layers monocrystalline semiconductor for chemical deposition from the vapor phase epitaxy and with molecular beam (MBE). Description of experimental apparatus for epitaxial growth. Omostrutture and heterostructures, disagreement and reticular system Si-Ge critical thickness. Property electrical and optical properties of semiconductor layers and their applications in optoelectronics and microelectronics. Some technique for material characterization.

Textbook Information

‘Materials Science’ J.C.Anderson, K.D.Leaver, R.D.Rawlings, J.M.Alexander. Chapman and Hall.

‘Termodinamica Statistica’ C.Kittel, H.Kroemer. Boringhieri.

‘Electronic Thin Film Science: For Electrical Engineering and Materials Scientist’ King-Ning Tu,

J.W. Mayer, L. C. Feldman. Prentice Hall.

Course Planning

 SubjectsText References
1Properties and characteristics of materials (metals, ceramics, polymers, semiconductors, and composites). Bonding in solids: metallic, ionic, covalent, Van der Waals and mixed.Semiquantitative evaluation of the binding energy and relations with the compressibility. Structures crystal packing factor. Relations between microscopic structure and propertiesmechanical. Surface energy of solids: description atomistic thermodynamics, mechanics.Growth layers and islands of the deposited films. Energy of grain boundaries in a polycrystal, the equilibrium shape of the crystalline grains. Transmission electron microscope: principles of operation and applications. Thermodynamics and phase diagrams. Recalling the thermodynamic state functions. Curves of solidification, nucleation homogeneous and heterogeneous. Binary solutions ideal and real: the construction of phase diagrams, energy mixing, configurational entropy. Completely miscible systems. Phase transitions, homogeneous nucleation and heterogeneous grain growth, formation of precipitates, vapor pressure and growth Ostwald. Curves of solidification. Diffusion in solids. Microscopic description of atomic diffusion and distribution of the diffusion coefficient. Steady State: the diffusion equation for an ideal solution. Continuity equation and Fick's laws. Measurement of diffusion coefficient and significance of activation energy. Interstitial diffusionYoung's modulus, Poisson's ratio, and creep modulus of compressibility, relations deformation-tension. Point defects and line. Burger vector of the dislocations. Description of geometric properties of dislocations, deformation field and elastic energy of a dislocation helix and sharp, interactions between dislocations. Deposition of thin films by evaporation. Nucleation, growth and coarsening of grains for ripening. Mechanical properties of a film thin, interaction with the substrate, the field of deformation, thermal expansion and influence on the substrate. Interdiffusion in thin films and the formation of compounds. Metallization and interconnects in semiconductor devices. Preparation of layers monocrystalline semiconductor for chemical deposition from the vapor phase epitaxy and with molecular beam (MBE). Description of experimental apparatus for epitaxial growth. Omostrutture and heterostructures, disagreement and reticular system Si-Ge critical thickness. Property electrical and optical properties of semiconductor layers and their applications in optoelectronics and microelectronics. Some technique for material characterization.‘Materials Science’ J.C.Anderson, K.D.Leaver, R.D.Rawlings, J.M.Alexander. Chapman and Hall.‘Termodinamica Statistica’ C.Kittel, H.Kroemer. Boringhieri.‘Electronic Thin Film Science: For Electrical Engineering and Materials Scientist’ King-Ning Tu,J.W. Mayer, L. C. Feldman. Prentice Hall.

Learning Assessment

Learning Assessment Procedures

Verification of learning takes place through a final oral exam that can have as topics all those covered during the course. The purpose of the interview is to verify the overall level of knowledge and its ability to explain the topics studied in a clear and critical way. During the exam, the student may be asked to perform simple calculations to verify the ability to quickly deal with problems that require at least identifying the orders of magnitude of physical quantities.

Verification of learning can also be carried out electronically, should the conditions require it.

Examples of frequently asked questions and / or exercises

Differences between amorphous, polycrystalline and monocrystalline states of matter

Diffusion of atoms in solids and on the surface

Nucleation

Phase Transitions

Growths of epitaxial thin films